Versatile platform for electrically reconfigurable

被引:1
|
作者
Ahadi, Saeedeh [1 ]
Neshat, Mohammad [2 ]
Moravvej-Farshi, Mohammad Kazem [1 ]
机构
[1] Tarbiat Modares Univ, Fac Elect & Comp Engn, Nano Plasmo Photon Res Grp, POB 14115194, Tehran 1411713116, Iran
[2] Univ Tehran, Coll Engn, Sch Elect & Comp Engn, Tehran 1439957131, Iran
关键词
FREQUENCY-SELECTIVE SURFACES; ELECTRON-BEAM LITHOGRAPHY; TERAHERTZ MODULATION; METAMATERIAL; POLARIZATION; METASURFACE; RESONANCE; DESIGN;
D O I
10.1364/JOSAB.523446
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We propose a versatile platform to design tunable metasurface devices based on Au/n-Si Schottky diodes embedded in a split-ring resonator (SRR) devised on a Si-on-insulator (SOI) wafer. The horizontally formed diodes are connected in the SRR radial direction, reducing the overall junction capacitance of the metasurface array compared to its counterparts with vertically formed Schottky junctions. This reduction in the junction capacitance has an essential role in the switching speed of the metasurface between the On and Off states. By carefully varying the externally applied bias voltage to the Schottky diodes, one can manipulate the incident THz signal at the metasurface resonance frequencies by converting its resonance mode by switching states. We use the forenamed platform to design three fundamental THz devices: a modulator, a polarization switch, and a polarizing beam splitter. A reverse bias of V R = 5 V excites two LC resonances at 0.3 THz and 0.89 THz in the modulator, which fade away by switching the gate voltage to V F = 0.49 V, exciting a dipole resonance in the metasurface at 0.75 THz. The numerical results show that this THz modulator enjoys modulation depths of >= 92% at the LC resonances and a phase modulation of similar to 1.16 rad at 0.86 THz. An identical electric bias change of the Schottky diodes in the polarization switch alters the resonators from anisotropic to isotropic, changing the output wave polarization from circular with nearly 99% of the circular polarization percentage to linear or quasi-linear at four frequencies simultaneously. Additionally, the proposed THz polarization splitter can deflect the cross-polarized transmitted component from the normally outgoing co-polarized one with an angle of 70 degrees degrees at 0.56 THz. The splitting ratio is switched from 1:1 in reverse bias to 14:1 in forward bias by changing the bias to forward bias. We expect that the proposed designs in the THz frequency domain, benefiting from the several hundred GHz switching speed of the Schottky diodes array, will be beneficial in applications such as analysis of the complex organic structures or polarization modulation and polarization-dependent multiplexing/demultiplexing in wireless communication systems. (c) 2024 Optica Publishing Group
引用
收藏
页码:1692 / 1704
页数:13
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