Room-temperature electroluminescence in the InAsSbP/InAs0.95Sb0.05/ 0.95 Sb 0.05 / InAsSbP single quantum well

The electrical and luminescent characteristics of the heterostructure with a 20 nm-wide n-InAsSbP/ n- InAs0.95Sb0.05/p-InAsSbP 0.95 Sb 0.05 / p- InAsSbP single quantum well, grown on an n-InAs substrate by the MOVPE method, have been studied. An intense room temperature electroluminescence (EL) with a maximum near the photon energy of 0.34 eV and a FWHM of 32 meV was discovered. It was established that the EL in such single quantum well has been emitted due to type I radiative transitions between the ground levels of electrons and holes both at forward and reverse bias. The characteristics of heterostructures with a single quantum well and the active region based on a bulk InAsSb layer of the same composition have been compared.