Room-temperature electroluminescence in the InAsSbP/InAs0.95Sb0.05/ 0.95 Sb 0.05 / InAsSbP single quantum well

被引：0
|
作者：
Moiseev, K. D. [1 ]
Ivanov, E. V. [1 ]
Romanov, V. V. [1 ]
机构：
[1] Ioffe Inst, 26 Politekhnicheskaya Str, St Petersburg 194021, Russia
来源：
JOURNAL OF LUMINESCENCE | 2024年 / 276卷
关键词：
Electroluminescence; III-V heterostructures; InAsSb/InAsSbP quantum well; Room temperature; Forward and reverse bias;
D O I：
10.1016/j.jlumin.2024.120856
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The electrical and luminescent characteristics of the heterostructure with a 20 nm-wide n-InAsSbP/ n- InAs0.95Sb0.05/p-InAsSbP 0.95 Sb 0.05 / p- InAsSbP single quantum well, grown on an n-InAs substrate by the MOVPE method, have been studied. An intense room temperature electroluminescence (EL) with a maximum near the photon energy of 0.34 eV and a FWHM of 32 meV was discovered. It was established that the EL in such single quantum well has been emitted due to type I radiative transitions between the ground levels of electrons and holes both at forward and reverse bias. The characteristics of heterostructures with a single quantum well and the active region based on a bulk InAsSb layer of the same composition have been compared.
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页数：4
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