Perovskite wafers, with superior optoelectronic properties and stability, show great promise for photovoltaic and photoelectric applications. However, traditional solution growth methods struggle with crystallization control and phase purity, while solid-phase synthesis methods encounter high-density grain boundary traps. To tackle these issues, we devised a scalable method combining physical thermal field and chemical bonding to fabricate inch- sized FAPbI(3) wafers, enabling efficient near-infrared photodetection. By integrating a 120 degrees C hot-pressing to stabilize the photoactive alpha phase and polyaniline polymer to conduct and passivate the grain boundaries, we obtained quasi-single crystal FAPbI(3) wafers on a large scale. This approach overcomes the critical challenges of phase impurities and high-density defects, enhancing the phase stability of the FAPbI3 3 wafers. As a result, the FAPbI(3) wafer-based photodetector exhibits an impressive external quantum efficiency of 312% at 854 nm near- infrared wavelength at 5 V bias, accompanied by a detectivity (D*)of 4.69 x 10(14) Jones and rapid response time in microsecond-scale. This performance surpasses conventional solution-grown single crystals, providing a scalable foundation for future integrated perovskite optoelectronic devices.
