Recent advances and prospects on MoX2 (X=S, Se, Te) nanostructure-based sensors for room temperature gas detection: A review

被引:11
|
作者
Thayil, Ruchika [1 ]
Parne, Saidi Reddy [1 ]
机构
[1] Natl Inst Technol Goa, Dept Appl Sci, Cuncolim 403703, Goa, India
关键词
2D materials; Nanomaterials; Molybdenum dichalcogenides; Nanocomposites; Gas sensors; SINGLE-LAYER MOS2; TRANSITION-METAL DICHALCOGENIDES; TOLUENE SENSING RESPONSE; ZNO NANORODS; PERFORMANCE; NANOCOMPOSITE; ADSORPTION; NANOFIBERS; PHOTOLUMINESCENCE; CHALCOGENIDES;
D O I
10.1016/j.surfin.2024.104966
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The development of molybdenum dichalcogenides MoX2 (X = S, Se, Te) two-dimensional (2D) nanostructures for room-temperature gas sensing has drawn intense interest in recent years. Nevertheless, low sensitivity, timeconsuming recovery process, and incomplete recovery have hindered their widespread application. Substantial effort has been dedicated to creating specialized gas sensors having enhanced sensing capabilities. This review highlights the relevant studies in this area, with particular emphasis on the material properties, synthesis approaches, and strategies for enhancing the effectiveness of gas sensors operating at room temperature, as well as challenges encountered in this area. Finally, potential directions for developing these nanostructures as efficient sensors are discussed.
引用
收藏
页数:20
相关论文
共 50 条
  • [21] Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates
    Scalise, E.
    Houssa, M.
    Cinquanta, E.
    Grazianetti, C.
    van den Broek, B.
    Pourtois, G.
    Stesmans, A.
    Fanciulli, M.
    Molle, A.
    2D MATERIALS, 2014, 1 (01):
  • [22] Modulation of band gap and optical response of layered MoX2 (X = S, Se, Te) for electronic and optoelectronic applications
    Babariya, Bindiya
    Raval, Dhara
    Gupta, Sanjeev K.
    Gajjar, P. N.
    MATERIALS TODAY COMMUNICATIONS, 2021, 28
  • [23] Tuning Dirac points by strain in MoX2 nanoribbons (X = S, Se, Te) with a 1T′ structure
    Sung, Ha-Jun
    Choe, Duk-Hyun
    Chang, K. J.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (24) : 16361 - 16366
  • [24] Comparative analysis of strain engineering on the electronic properties of homogenous and heterostructure bilayers of MoX2 (X = S, Se, Te)
    Palepu, Joshna
    Anand, P. Pranav
    Parshi, Pradyumna
    Jain, Vishesh
    Tiwari, Aditya
    Bhattacharya, Sandip
    Chakraborty, Sudipta
    Kanungo, Sayan
    MICRO AND NANOSTRUCTURES, 2022, 168
  • [25] Unveiling the multilevel structure of midgap states in Sb-doped MoX2 (X = S, Se, Te) monolayers
    Menezes, Marcos G.
    Ullah, Saif
    PHYSICAL REVIEW B, 2021, 104 (12)
  • [26] Electronic structure and fundamental properties of MoX2 (X=Te, Se and S) compound materials at high pressures and elevated temperatures
    Berri, Saadi
    Bouarissa, Nadir
    COMPUTATIONAL CONDENSED MATTER, 2021, 28
  • [27] Mechanical strain dependent electronic and dielectric properties of two-dimensional honeycomb structures of MoX2 (X=S, Se, Te)
    Kumar, Ashok
    Ahluwalia, P. K.
    PHYSICA B-CONDENSED MATTER, 2013, 419 : 66 - 75
  • [28] Review-Recent Material Advances and Their Mechanistic Approaches for Room Temperature Chemiresistive Gas Sensors
    Reddy, Bapathi Kumaar Swamy
    Borse, Pramod H.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2021, 168 (05)
  • [29] Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs
    Chang, Jiwon
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (14)
  • [30] 2D-MoX2 (X = S, Se, Te) and Their Nanocomposite Toward Sensing Application: A Review
    Mohan, Bitupan
    Boruah, Ujjibit
    Sonkar, Rahul
    Mondal, Nur Jalal
    Chowdhury, Devasish
    PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION, 2025, 42 (03)