Hierarchically In2S3@In2O3 nanorods heterojunctions for enhanced NO2 sensing at lower operating temperature

被引:3
|
作者
Li, Xinlei [1 ]
Zhang, Zhaoyi [1 ]
Sun, Shupeng [1 ]
Wang, Nan [1 ]
Huang, Baoyu [1 ]
Li, Xiaogan [1 ]
机构
[1] Dalian Univ Technol, Sch Integrated Circuits, Dalian 116024, Liaoning, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Hierarchical In 2 S 3 @In 2 O 3 nanorods; Low-temperature NO 2 sensors; DFT calculations; In-situ AC impedance; Power law; SEMICONDUCTOR GAS SENSORS; POWER-LAW RESPONSE; GRAIN-SIZE; MESOPOROUS IN2O3; METAL-OXIDES; HETEROSTRUCTURES; PERFORMANCE; FABRICATION; OXYGEN; EPR;
D O I
10.1016/j.snb.2024.136360
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Hierarchically structured In2S3@In2O3 nanorods were synthesized via a two-step hydrothermal method. Compared to single-component In2O3 based sensors, the as-developed In2S3@In2O3 nanorods based chemiresistive-type sensor exhibited significantly enhanced response and reduced operating temperature. The sensor displayed a response of approximately 51.2 to 3 ppm NO2 at 120 degrees C, with a response time and recovery time of 76 and 48 seconds, respectively, and a detection limit of NO2 concentration to 0.014 ppm. By constructing In2S3@In2O3 heterojunctions, the optimal operating temperature has been effectively lowered from 160 degrees C to 120 degrees C. The improved sensing performance is attributable to the nano-heterojunctions formed between In2S3 and In2O3, which increase the specific surface area to provide additional active adsorption sites, and as well, prevent the shielding effect of surface-adsorbed oxygen on NO2. Density functional theory (DFT) calculations demonstrated that the introduction of heterojunctions of In2S3@In2O3 enhances the adsorption energy and charge transfer between NO2 and the sensing material.
引用
收藏
页数:12
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