Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation

This study investigates the radiative relaxation of electronic excitations through luminescence spectroscopy techniques applied to high-purity KBr crystals subjected to low-temperature (85 K) uniaxial deformation along the <100> and <110> crystallographic directions. Results demonstrate that the most significant enhancement in the intensity of sigma-(4.42 eV) and pi-(2.3 eV) luminescence from self-trapped excitons in KBr crystals occurs with elastic deformation along the <110> direction, aligning with the axis of the hole component of the anion self-trapped exciton. Deformation-induced changes in X-ray, tunneling, and thermally stimulated luminescence spectra reveal a new band, denoted as E-x, peaking at approximately 3.58 eV, attributed to tunneling charge exchange between the F'- and V-K-centers in their ground state.