Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation

被引:0
|
作者
Shunkeyev, Kuanyshbek [1 ]
Sagimbayeva, Shynar [1 ]
Ubaev, Zhiger [1 ]
Kenzhebayeva, Adelya [1 ]
机构
[1] K Zhubanov Aktobe Reg Univ, Sci Ctr Radiat Phys Mat, Aktobe 030000, Kazakhstan
关键词
ionic crystal; high-purity KBr crystal; self-trapped exciton; uniaxial deformation; low temperature; X-ray luminescence; tunnel luminescence; thermally stimulated luminescence; SELF-TRAPPED EXCITONS; ALKALI-HALIDE CRYSTALS; SINGLE-CRYSTALS; TUNNELING RECOMBINATION; SURFACE PROCESSES; HOLES; NANOTUBES; EMISSION; DEFECTS;
D O I
10.3390/cryst14080698
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This study investigates the radiative relaxation of electronic excitations through luminescence spectroscopy techniques applied to high-purity KBr crystals subjected to low-temperature (85 K) uniaxial deformation along the <100> and <110> crystallographic directions. Results demonstrate that the most significant enhancement in the intensity of sigma-(4.42 eV) and pi-(2.3 eV) luminescence from self-trapped excitons in KBr crystals occurs with elastic deformation along the <110> direction, aligning with the axis of the hole component of the anion self-trapped exciton. Deformation-induced changes in X-ray, tunneling, and thermally stimulated luminescence spectra reveal a new band, denoted as E-x, peaking at approximately 3.58 eV, attributed to tunneling charge exchange between the F'- and V-K-centers in their ground state.
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页数:13
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