Design and evaluation of β-Ga2O3 junction barrier schottky diode with p-GaN heterojunction

A novel design for a junction barrier Schottky (JBS) diode based on a p-GaN/n-Ga2O3 heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown capability compared to the traditional Ga2O3 Schottky barrier diode (SBD). By utilizing wide-bandgap p-type GaN, the beta-Ga2O3 JBS diodes demonstrate a turn-on voltage (V-on) of approximately 0.8 V. Moreover, a breakdown voltage (V-br) of 880 V and a specific on-resistance (R-on,R-sp) of 3.96 m Omega center dot cm(2) are achieved, resulting in a Baliga's figure of merit (BFOM) of approximately 0.2 GW /cm (2). A forward current density of 465 A cm(-2) at a forward voltage of 3 V is attained. The simulated reverse leakage current density remains low at 9.0 mA cm(-2) at 800 V. Floating field rings, in conjunction with junction termination extension (JTE), were utilized as edge termination methods to attain a high breakdown voltage. The impact of beta-Ga2O3 periodic fin width fluctuations on the electrical characteristics of JBS was investigated. Due to the enhanced sidewall depletion effect caused by p-type GaN, the forward current (I-F) and reverse current (I-R) decrease when the beta-Ga2O3 periodic fin width decreases. The findings of this study indicate the remarkable promise of p-GaN/n-Ga2O3 JBS diodes for power device applications.