Physics-based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)

The compact model plays a pivotal role as a critical link between device fabrication and circuit design. While conventional compact model theories and techniques are generally mature, the intricate physical mechanisms of gallium nitride (GaN) high-electron mobility transistors (HEMTs) pose challenges due to their strong non-linearity in high-power radio frequency (RF) applications. This complexity hinders achieving the required precision for applications using traditional modeling methods. Therefore, the development of physics-based compact modeling techniques becomes crucial for a deeper understanding of the intricate features of GaN HEMTs. This paper explores the advancements and the current state-of-the-art in physics-based compact models. The comprehensive review covers both intrinsic core models and real-device effects models. Core models are presented with a focus on fundamental concepts, development overviews, and applications. Additionally, the real-device effects models are introduced, encompassing advanced characterization techniques and modeling methodologies. Furthermore, the paper outlines future trends in physics-based compact modeling, providing valuable insights for individuals engaged in transistor compact modeling work.