Linear photogalvanic effect in two-dimensional PSi photodetector by vacancy- and substitution-doping

被引:0
|
作者
Fu, Xi [1 ,2 ]
Lin, Jian [2 ]
Liang, Guangyao [2 ]
Liao, Wenhu [2 ]
Li, Xiaowu [1 ]
Wu, Qinghua [1 ]
Zeng, Hui [1 ]
机构
[1] Hunan Universtiy Sci & Engn, Coll Sci, Yongzhou 425199, Peoples R China
[2] Jishou Univ, Coll Phys & Mech & Electr Engn, Jishou 416000, Peoples R China
基金
中国国家自然科学基金; 湖南省自然科学基金;
关键词
First-principles calculation; Photogalvanic effect; PSi monolayer; Doping; SIP; POLARIZATION;
D O I
10.1016/j.cplett.2024.141332
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using particle swarm optimization methodology for crystal structure prediction and first-principles density functional theory, a graphene-like honeycombed PSi monolayer has been found by our group with its thermodynamical, dynamical and mechanical stability having been listed. To extend the application of the PSi mono- layer, the armchair and zigzag photodetector devices based on the photogalvanic effect have been built. When the linearly polarized light illuminates on the armchair or zigzag photodetector, due to the C1 symmetry of PSi monolayer the PSi photodetector can directly produce high photocurrents. In addition, the produced photo- currents show the relations cos(2B) and sin(2B) on the polarization angle theta for the armchair and zigzag photo- detector, respectively. Moreover, the value of photon energy can effectively influence the distribution of generated photocurrents, namely the relations on the angle B. Especially, the vacancy- and substitution-doping in the PSi photodetector can enhance the generated photocurrents. These results demonstrated great potential applications of the PSi monolayer on the low energy-consumption optoelectronics devices.
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页数:5
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