Systematic Modeling and Optimization for High-Efficiency Interdigitated Back-Contact Crystalline Silicon Solar Cells

This study utilizes Quokka3, an advanced solar cell simulation program, specifically tailored for interdigitated back-contact (IBC) crystalline silicon (c-Si) solar cells. Through meticulous Quokka3 simulations, the influence of several geometric and wafer characteristics of the solar cell backside on current-voltage (I-V) performance has been scientifically explored for IBC c-Si solar cells. The investigation encompasses parameters such as wafer thickness, bulk lifetime, resistivity, emitter and back surface field area fraction, and front- and rear-surface passivation. Optimal values for these parameters have been proposed to enhance the efficiency of IBC solar cells. These recommendations contain an emitter percentage of 70%, a wafer thickness ranging from 200 mu m, a wafer resistivity of 1 Omega cm, and a wafer bulk lifetime of at least 10 ms. Moreover, under conditions where the cell is not short-circuited, the potential for achieving higher cell efficiency, up to 26.64%, has been shown. This study uses Quokka3 to simulate interdigitated back-contact (IBC) c-Si solar cells, examining the impact of geometric and wafer characteristics. Optimal parameters include a 70% emitter percentage, 200 mu m thickness, 1 Omega cm resistivity, and 10 ms bulk lifetime. These optimizations achieve up to 26.64% efficiency, significantly enhancing performance, with open-circuit voltage (Voc) = 737.9 mV, short-circuit current (Jsc) = 42.06 mA cm-2, and Fill Factor (FF) = 85.85%.image (c) 2024 WILEY-VCH GmbH