Carrier transfer in quasi-2D perovskite/MoS2 monolayer heterostructure

被引:2
|
作者
Qin, Chaochao [2 ,3 ]
Wang, Wenjing [2 ,3 ]
Song, Jian [2 ,3 ]
Jiao, Zhaoyong [2 ,3 ]
Ma, Shuhong [2 ,3 ]
Zheng, Shuwen [2 ,3 ]
Zhang, Jicai [2 ,3 ]
Jia, Guangrui [2 ,3 ]
Jiang, Yuhai [1 ]
Zhou, Zhongpo [2 ,3 ]
机构
[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[2] Henan Normal Univ, Henan Key Lab Infrared Mat & Spectrum Measures &, Xinxiang 453007, Henan, Peoples R China
[3] Henan Normal Univ, Sch Phys, Xinxiang 453007, Henan, Peoples R China
基金
中国国家自然科学基金;
关键词
quasi-2D perovskites; transition-metal dichalcogenides; heterostructure; transient absorption; carrier transfer;
D O I
10.1515/nanoph-2023-0570
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional layered semiconductors have attracted intense interest in recent years. The van der Waals coupling between the layers tolerates stacking various materials and establishing heterostructures with new characteristics for a wide range of optoelectronic applications. The interlayer exciton dynamics at the interface within the heterostructure are vitally important for the performance of the photodetector and photovoltaic device. Here, a heterostructure comprising two-dimensional organic-inorganic Ruddlesden-Popper perovskites and transition metal dichalcogenide monolayer was fabricated and its ultrafast charge separation processes were systematically studied by using femtosecond time-resolved transient absorption spectroscopy. Significant hole and electron transfer processes in the ps and fs magnitude at the interface of the heterostructure were observed by tuning pump wavelengths of the pump-probe geometries. The results emphasize the realization of the exciton devices based on semiconductor heterostructures of two-dimensional perovskite and transition metal dichalcogenide.
引用
收藏
页码:4495 / 4505
页数:11
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