Significantly enhanced performance and conductivity mechanism in Nb/Mn co-doped CaBi4Ti4O15 ferroelectrics

被引:11
|
作者
Xu, Jiageng [1 ]
Xie, Shaoxiong [1 ,2 ,3 ]
Xu, Qian [4 ]
Xing, Jie [5 ]
Wang, Qingyuan [2 ,4 ]
Zhu, Jianguo [5 ]
机构
[1] Sichuan Univ, Sch Aeronaut & Astronaut, Chengdu 610000, Peoples R China
[2] Chengdu Univ, Inst Adv Study, Chengdu 610106, Peoples R China
[3] Kyushu Univ, Dept Mech Engn, Fukuoka 8190395, Japan
[4] Sichuan Univ, Coll Architecture & Environm, Chengdu 610065, Peoples R China
[5] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610065, Peoples R China
基金
中国国家自然科学基金;
关键词
Lattice distortion; Electrical performance; Domain structure; Conductivity mechanism; REMARKABLE PIEZOELECTRIC ACTIVITY; HIGH-TEMPERATURE PIEZOCERAMICS; OXYGEN VACANCY DEFECTS; ELECTRICAL-PROPERTIES; THERMAL-STABILITY; T-C; SINTERING TEMPERATURE; STRUCTURAL DISTORTION; BI4TI3O12; CERAMICS; MICROSTRUCTURE;
D O I
10.1016/j.jmat.2023.09.003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
With the rapid development of high-end industries, the demand for high-temperature piezoelectric materials is significantly increasing. However, realizing the ultra-high performance to meet more applications still faces major scientific and engineering challenges of our time. Here, a new Nb/Mn codoped CaBi4Ti4O15 (CBT) high-temperature piezoelectric material system of CaBi4Ti4-x(Nb2/3Mn1/3)xO15 was synthesized by the conventional solid-state sintering method. The results show that the addition of the dopants tends to break the long-range ferroelectric chain and soften the flexibility of polarization, resulting in more distorted crystal structure and better ferroelectric properties of CBT ceramics. The ultra-high piezoelectric constant (d33 = 26.8 pC/N) is thus attained in CBT-based ceramics with x = 0.12, which is about several times larger than that of pure CBT ceramics. Moreover, numerous nano-sized layered domain structures that lie on the lateral plane of grains are observed in ceramics, with lower domain wall energy and better dynamic features under electric fields, mainly responsible for the origin of enhanced performance. Besides, excess dopants could make the conductivity mechanism of CBT ceramics transform from p-type to n-type, and also result in a shift of conduction relaxation mechanism from defect dipole rotation polarization to electron relaxation polarization. The work not only provides a promising candidate for high-temperature piezoelectric materials, but also opens a window for optimizing performance by tailoring domain structures using chemical modification. (c) 2023 The Authors. Published by Elsevier B.V. on behalf of The Chinese Ceramic Society. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
引用
收藏
页码:652 / 669
页数:18
相关论文
共 50 条
  • [41] Multilayer Structured CaBi4Ti4O15 Thin Film Capacitor with Excellent Energy Storage Performance
    Guo, Xiaoying
    Yuan, Xiufang
    Wang, Wenwen
    Wang, Wenxuan
    Zhou, Yuanyuan
    Lin, Xiujuan
    Huang, Shifeng
    Yang, Changhong
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (04)
  • [42] Multilayer Structured CaBi4Ti4O15 Thin Film Capacitor with Excellent Energy Storage Performance
    Xiaoying Guo
    Xiufang Yuan
    Wenwen Wang
    Wenxuan Wang
    Yuanyuan Zhou
    Xiujuan Lin
    Shifeng Huang
    Changhong Yang
    Journal of Materials Science: Materials in Electronics, 2023, 34
  • [43] A New SrBi4Ti4O15/CaBi4Ti4O15 Thin Film Capacitor for Excellent Electric Stability
    Nomura, Shuhei
    Yamashita, Kaoru
    Noda, Minoru
    Uchida, Hiroshi
    Funakubo, Hiroshi
    2011 INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (ISAF/PFM) AND 2011 INTERNATIONAL SYMPOSIUM ON PIEZORESPONSE FORCE MICROSCOPY AND NANOSCALE PHENOMENA IN POLAR MATERIALS, 2011,
  • [44] Effects of La doping on ferroelectric properties of CaBi4Ti4O15 thin films
    Ding, Yanxia
    Hu, Guangda
    Fan, Suhua
    SURFACE REVIEW AND LETTERS, 2007, 14 (02) : 277 - 281
  • [45] Effect of different sintering temperatures on the electrical properties of the CaBi4Ti4O15 ceramics
    College of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China
    不详
    Rengong Jingti Xuebao, 2007, 2 (396-399+380):
  • [46] 组分影响CaBi4Ti4O15介电性能的研究
    郑夏莲
    黄新友
    高春华
    硅酸盐通报, 2006, (01) : 105 - 108
  • [47] Bipolar resistive switching behaviours of perovskite CaBi4Ti4O15 thin films
    Lin, J. Y.
    Wu, C. L.
    MATERIALS RESEARCH INNOVATIONS, 2015, 19 : S407 - S409
  • [48] Piezoelectric properties of lead-free CaBi4Ti4O15 thin films
    Arai, F
    Motoo, K
    Fukuda, T
    Kato, K
    APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4217 - 4218
  • [49] Energy trapping characteristics of bismuth layer structured compound CaBi4Ti4O15
    Kimura, M
    Sawada, T
    Ando, A
    Sakabe, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5557 - 5560
  • [50] Preparation of ferroelectric CaBi4Ti4O15 powders from novel hydroxide precursors
    Deshmukh, Rupali G.
    Vaishampayan, Mukta V.
    Darshane, S. L.
    Mulla, I. S.
    Gaikwad, A. B.
    Rao, N. Kotaserwara
    Ravi, V.
    MATERIALS LETTERS, 2008, 62 (12-13) : 1751 - 1753