Photodetectors based on two-dimensional MoS 2 and its assembled heterostructures

被引:40
|
作者
Hu, Tao [1 ]
Zhang, Rui [1 ]
Li, Jin-Ping [1 ]
Cao, Jian-Yun [1 ]
Qiu, Feng [1 ]
机构
[1] Yunnan Univ, Natl Ctr Int Res Photoelect & Energy Mat, Yunnan Key Lab Micro Nano Mat & Technol, Sch Mat & Energy, Kunming 650500, Peoples R China
来源
CHIP | 2022年 / 1卷 / 03期
基金
中国国家自然科学基金;
关键词
MoS; 2; Synthetic strategy; Figures of merit; Heterostructure photodetector; TRANSITION-METAL DICHALCOGENIDES; DER-WAALS HETEROSTRUCTURES; MOLYBDENUM-DISULFIDE MOS2; ULTRA-BROAD-BAND; MONOLAYER MOS2; ELECTRONIC-PROPERTIES; LAYER MOS2; MECHANICAL-PROPERTIES; VALLEY POLARIZATION; ENERGY-CONVERSION;
D O I
10.1016/j.chip.2022.100017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photodetectors are finding various potential applications in sensing and detection, information communication, light-emitting diode, optical modulators, ultrafast laser, etc. Molybdenum disulfide (MoS 2 ) has sparked great interest given its unique crystal phase, flexible preparation, structural stability, and regulable photoelectronic features. Therefore, the MoS 2 -based photodetector is demonstrated to be an excellent device fabrication platform to explore underlying sensitive detection, broadband optical detection, high-speed response, low-power consumption, two-dimensional integrated circuit, and its synergetic mechanism, which is also proved to be an excellent candidate for next-generation optoelectronics. This review summarizes the structural, optical, and transport features of MoS 2 . Then the working mechanisms and figures of merit are explored for the MoS 2 detector. Further, the detector modulation strategies are introduced in detail about layer-number engineering and chemical doping engineering. Afterward, the recent heterostructure assembling strategies (MoS 2 /nD, n = 0,1,2,3) of detector architectures are classified based on flexible van der Waals assembling. Finally, the future direction of MoS 2 photodetectors is discussed, which can be delivered as a feasifields.
引用
收藏
页数:20
相关论文
共 50 条
  • [31] Novel Photodetectors Based on SOI and Two-dimensional Materials
    Chou, Jing Jing
    Liu, Jian
    Wan, Jing
    TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021), 2021, : 63 - 64
  • [32] Avalanche photodetectors based on two-dimensional layered materials
    Jinshui Miao
    Chuan Wang
    Nano Research, 2021, 14 : 1878 - 1888
  • [33] Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2and MoS2: A Review
    Mukhokosi, Emma P.
    Manohar, Gollakota V. S.
    Nagao, Tadaaki
    Krupanidhi, Saluru B.
    Nanda, Karuna K.
    MICROMACHINES, 2020, 11 (08)
  • [34] Emerging terahertz photodetectors based on two-dimensional materials
    Yang, Jie
    Qin, Hua
    Zhang, Kai
    OPTICS COMMUNICATIONS, 2018, 406 : 36 - 43
  • [35] Two-Dimensional MoS2 on p-Type GaN for UV-Vis Photodetectors
    Yang, Yufei
    Sun, Wenhong
    ACS APPLIED NANO MATERIALS, 2023, 7 (01) : 84 - 91
  • [36] CVD Growth of MoS2-based Two-dimensional Materials
    Liu, H. F.
    Wong, S. L.
    Chi, D. Z.
    CHEMICAL VAPOR DEPOSITION, 2015, 21 (10-12) : 241 - 259
  • [37] Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum
    Miwa, Jill A.
    Dendzik, Maciej
    Gronborg, Signe S.
    Bianchi, Marco
    Lauritsen, Jeppe V.
    Hofmann, Philip
    Ulstrup, Soren
    ACS NANO, 2015, 9 (06) : 6502 - 6510
  • [38] Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix
    Wang, Xuewen
    Wang, Bolun
    Wu, Yonghuang
    Wang, Enze
    Luo, Hao
    Sun, Yufei
    Fu, Deyi
    Sun, Yinghui
    Liu, Kai
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (22) : 26143 - 26151
  • [39] Plasmonic MXene Nanoparticle-Enabled High-Performance Two-Dimensional MoS2 Photodetectors
    Zou, Jihua
    Huang, Yixuan
    Wang, Wenhao
    Li, Caihong
    Wei, Shunyong
    Liu, Hezhuang
    Luo, Lingzhi
    Du, Wen
    Shen, Kai
    Ren, Aobo
    Wu, Jiang
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (06) : 8243 - 8250
  • [40] Photodetectors based on two-dimensional semiconductors: Progress, opportunity and challenge
    Li L.
    Pi L.
    Li H.
    Zhai T.
    Zhai, Tianyou (zhaity@hust.edu.cn), 1600, Chinese Academy of Sciences (62): : 3134 - 3153