High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes

被引：0

作者：

Shakir, Syeda Wageeha ^{[1
]}

Usman, Muhammad ^{[1
]}

Habib, Usman ^{[1
]}

Ali, Shazma ^{[1
]}

Mustafa, Laraib ^{[1
]}

机构：

[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23460, Khyber Pakhtunk, Pakistan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2024年 / 13卷 / 07期

关键词：

laser diode; AlGaN; power; far ultraviolet;

D O I：

10.1149/2162-8777/ad5a3b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical features of far ultraviolet laser diodes (UV LDs) with peak wavelength emission of 221 nm have been numerically analyzed. Global research teams are developing aluminum gallium nitride (AlGaN)-based farUV LDs on Sapphire and AlN substrates as an alternative to Mercury lamps for air-water purification, polymer curing, and bio-medical devices. In this study, the light output power, internal quantum efficiency, stimulated recombination rate curve, and optical gain curve of the compositionally graded p-cladding layer (p-CL) were studied and show significant improvements. Therefore, the optimized structure can reduce the overflow of electrons and increase the injection of holes. This approach proves to be an efficient method for enhancing farUV LDs' overall performance when compared to the reference structure.

引用

页数：4

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