Solar-Blind Ultraviolet Anisotropic Polarization Detection by β-Ga2O3 Based Schottky Photodiodes

beta-Ga2O3 is expected to achieve polarization detection in the solar-blind ultraviolet due to its ultra-broad bandgap and anisotropic crystal structure. In this work, we theoretically analyze the physical mechanism of beta-Ga2O3 to achieve polarization detection from the probabilities of electron transition. The (010) beta-Ga2O3 photodetector with a Schottky photodiode structure has a maximum responsivity of 1.1 A/W and a detective rate of 3.8 x 10(12) Jones. The polarization detection performance of different crystalline planes was compared, and the polarization sensitivity of the (001) surface is stronger, with an anisotropic polarized photocurrent ratio (PR) of 5.8. This work is expected to contribute to the further development of beta-Ga2O3 solar-blind ultraviolet polarization detectors.