Epitaxial oxide ionotronics: Interfaces and oxygen vacancies

被引:0
|
作者
Wenderott, Jill K. [1 ,2 ]
Billo, Tadesse [1 ]
Fong, Dillon D. [1 ]
机构
[1] Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA
[2] Drexel Univ, Mat Sci & Engn, Philadelphia, PA 19104 USA
来源
APL MATERIALS | 2024年 / 12卷 / 05期
关键词
TEMPERATURE DEFECT CHEMISTRY; SITU X-RAY; COMPLEX OXIDES; CHEMICAL EXPANSION; IONIC-CONDUCTIVITY; PHASE-TRANSITION; STRAIN; DIFFUSION; EXCHANGE; NONSTOICHIOMETRY;
D O I
10.1063/5.0206822
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Oxide ionotronics is an interdisciplinary field in which systems and devices rely on the migration of ions/ionic defects to alter or drive functionality. In this perspective, we focus on epitaxial oxide heterostructures and the contributing roles of oxygen vacancies and interfaces in ionotronics. We begin with a description of oxygen vacancy behavior, with a focus on vacancy ordering and the effects of interfaces and electric fields on particular epitaxial oxide systems. We then emphasize the use of synchrotron x-ray techniques for investigating system structure and dynamics in situ at interfaces and surfaces. Finally, an outlook on the future of epitaxial oxide ionotronics is provided, and several key areas for research are identified, such as freestanding heterostructures, combinatorial synthesis and machine learning, and next-generation synchrotron x-ray characterization.
引用
收藏
页数:10
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