Effect of hydrogen on graphene growth on SiC(0001) under atmospheric pressure

被引：0
|
作者：
Chen, Lingxiu [1 ]
Wang, Dehe [1 ]
Sun, Qingxu [1 ]
Wu, Junyuan [1 ]
Sun, Hongyu [1 ]
Zhang, Yang [1 ]
Shi, Liwei [1 ]
机构：
[1] China Univ Min & Technol, Sch Mat Sci & Phys, Xuzhou 221116, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2025年 / 165卷
关键词：
Graphene; Epitaxial growth; Hydrogen; Silicon carbide; Atmospheric pressure;
D O I：
10.1016/j.physe.2024.116088
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Epitaxial growth of graphene on silicon carbide (SiC) facilitates the direct application of graphene in the semiconductor field. During the graphene preparation process, hydrogen plays a crucial role in determining its morphology. Therefore, studying the influence of hydrogen on the graphene morphology on the SiC surface is of great significance. In this study, we present a direct epitaxial growth of graphene on the SiC(0001) surface under atmospheric pressure. Our focus extends beyond the growth process itself to investigate the important role of hydrogen in shaping the quality and morphology of both the substrate and the graphene. By showing the influence of hydrogen at various stages, our research aims to contribute insights that advance the seamless integration of graphene into the semiconductor field.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Interface Oxidative Structural Transitions in Graphene Growth on SiC (0001)
    Lu, Weijie
    Barbosa, Roland
    Clarke, Edwina
    Eyink, Kurt
    Grazulis, Lawrence
    Mitchel, William C.
    Boeckl, John J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (29): : 15342 - 15347
  • [22] Graphene as a surfactant for metal growth on solid surfaces: Fe on graphene/SiC(0001)
    Wang, Zhou-Jun
    Dong, Aiyi
    Wei, Mingming
    Fu, Qiang
    Bao, Xinhe
    APPLIED PHYSICS LETTERS, 2014, 104 (18)
  • [23] Electrical Characterization of Bilayer Graphene Formed by Hydrogen Intercalation of Monolayer Graphene on SiC(0001)
    Tanabe, Shinichi
    Sekine, Yoshiaki
    Kageshima, Hiroyuki
    Hibino, Hiroki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
  • [24] Energy characteristics of SiC(0001)-intercalated hydrogen-graphene system
    S. Yu. Davydov
    A. A. Lebedev
    Technical Physics Letters, 2010, 36 : 856 - 858
  • [25] Hydrogen intercalation of graphene grown on 6H-SiC(0001)
    Watcharinyanon, S.
    Virojanadara, C.
    Osiecki, J. R.
    Zakharov, A. A.
    Yakimova, R.
    Uhrberg, R. I. G.
    Johansson, L. I.
    SURFACE SCIENCE, 2011, 605 (17-18) : 1662 - 1668
  • [26] Energy characteristics of SiC(0001)-intercalated hydrogen-graphene system
    Davydov, S. Yu.
    Lebedev, A. A.
    TECHNICAL PHYSICS LETTERS, 2010, 36 (09) : 856 - 858
  • [27] Atmospheric pressure route to epitaxial nitrogen-doped trilayer graphene on 4H-SiC (0001) substrate
    Boutchich, M.
    Arezki, H.
    Alamarguy, D.
    Ho, K-I
    Sediri, H.
    Guenes, F.
    Alvarez, J.
    Kleider, J. P.
    Lai, C. S.
    Ouerghi, A.
    APPLIED PHYSICS LETTERS, 2014, 105 (23)
  • [28] The effect of the SiC(0001) surface morphology on the growth of epitaxial mono-layer graphene nanoribbons
    Galves, L. A.
    Wofford, J. M.
    Soares, G. V.
    Jahn, U.
    Pfueller, C.
    Riechert, H.
    Lopes, J. M. J.
    CARBON, 2017, 115 : 162 - 168
  • [29] Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001)
    Yu Cui
    Li Jia
    Liu Qing-Bin
    Cai Shu-Jun
    Feng Zhi-Hong
    ACTA PHYSICA SINICA, 2014, 63 (03)
  • [30] Surface morphology control of the SiC (0001) substrate during the graphene growth
    Lebedev, S. P.
    Amel'chuk, D. G.
    Eliseyev, I. A.
    Barash, I. S.
    Dementev, P. A.
    Zubov, A., V
    Lebedev, A. A.
    FULLERENES NANOTUBES AND CARBON NANOSTRUCTURES, 2020, 28 (04) : 281 - 285
12345