Effect of hydrogen on graphene growth on SiC(0001) under atmospheric pressure

被引：0

作者：

Chen, Lingxiu ^{[1
]}

Wang, Dehe ^{[1
]}

Sun, Qingxu ^{[1
]}

Wu, Junyuan ^{[1
]}

Sun, Hongyu ^{[1
]}

Zhang, Yang ^{[1
]}

Shi, Liwei ^{[1
]}

机构：

[1] China Univ Min & Technol, Sch Mat Sci & Phys, Xuzhou 221116, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2025年 / 165卷

关键词：

Graphene; Epitaxial growth; Hydrogen; Silicon carbide; Atmospheric pressure;

D O I：

10.1016/j.physe.2024.116088

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial growth of graphene on silicon carbide (SiC) facilitates the direct application of graphene in the semiconductor field. During the graphene preparation process, hydrogen plays a crucial role in determining its morphology. Therefore, studying the influence of hydrogen on the graphene morphology on the SiC surface is of great significance. In this study, we present a direct epitaxial growth of graphene on the SiC(0001) surface under atmospheric pressure. Our focus extends beyond the growth process itself to investigate the important role of hydrogen in shaping the quality and morphology of both the substrate and the graphene. By showing the influence of hydrogen at various stages, our research aims to contribute insights that advance the seamless integration of graphene into the semiconductor field.

引用

页数：4

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