Tri-layered Si/Co3O4/ZnO heterojunction for high-performance visible photodetection

Tri-layered heterojunction devices based on oxide thin films are attracting significant attention for ultra-fast visible photodetection. However, the responsivity of these devices is still low. In this work, high performance photodetectors based on a tri-layered heterojunction of n-Si/p-Co3O4/n-ZnO were fabricated. Under no applied bias, a maximum responsivity and detectivity of 14.2 mA W-1 and 1.34 x 10(12) Jones were achieved respectively, for a power density of 9.35 mW cm(-2). Remarkably, a significant increase in the responsivity of approximately 864% was found when the device was biased at -2 V. This effect is understood based on the coupling of the photovoltaic and pyroelectric effects. Also, upon applying an external bias of -2 V, at a laser power density of 9.35 mW cm(-2) and at a chopper frequency of 10 Hz, the device exhibits a detectivity and sensitivity of 3.4 x 10(11) Jones and 2.2, respectively, together with a rise and fall time of 4 and 2 mu s, respectively. Compared to high performance Al/Si/SnO/ZnO/ITO and Au/pCuI/ZnO devices, our voltage-biased Al/Si/Co3O4/ZnO/ITO devices exhibit a >40% increase in R and >10x higher D*. Furthermore, an important advantage of our PDs is the p-type component, Co3O4, which is more stable and stoichiometric than CuI and SnO, ensuring PD performance that is stable with time. Therefore, n-Si/p-Co3O4/n-ZnO heterojunction devices shows great promise for ultrafast visible photodetection.