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- [35] Investigation of the dopant segregation phenomenon in Nb-doped BaTiO3 positive-temperature-coefficient-resistor by impedance analysis JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (08): : 4824 - 4831
- [36] Investigation of the dopant segregation phenomenon in Nb-doped BaTiO3 positive-temperature-coefficient-resistor by impedance analysis Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (08): : 4824 - 4831