SiC Power Module Design with a Low-Permittivity Material to Reduce Common-Mode Noise

被引:2
|
作者
Choi, Sihoon [1 ]
Choi, Jiyoon [1 ]
Shin, Jong-Won [2 ]
Yonezawa, Yu [3 ]
Imaoka, Jun [3 ]
Yamamoto, Masayoshi [3 ]
机构
[1] Nagoya Univ, Dept Elect Engn, Nagoya, Aichi, Japan
[2] Chung Ang Univ, Sch Energy Syst Engn, Seoul, South Korea
[3] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi, Japan
关键词
Power module Design; low-permittivity material; common-mode noise;
D O I
10.1109/APEC48139.2024.10509406
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study proposes a silicon carbide (SiC) power module design to reduce common-mode (CM) noise. A low permittivity material replaces a part of the bottom copper layer of a direct-bonded copper (DBC) substrate, which decreases CM capacitance. The design scheme does not sacrifice thermal performance and the size of power module. The parasitic CM capacitance of the proposed module is reduced by 52.5% compared to that of the conventional module. Double pulse tests verified that the peak CM current was attenuated by 52% and 43% at turn-off and at turn-on instant, respectively. To examine the thermal performance and reliability of power modules, thermal simulations and thermal cycling tests were also conducted.
引用
收藏
页码:1472 / 1477
页数:6
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