Effect of Cu Film Thickness on Cu Bonding Quality and Bonding Mechanism

被引：1

作者：

Lu, Tsan-Feng ^{[1
]}

Hsu, Kai-Ning ^{[1
]}

Hsu, Ching-Chi ^{[1
]}

Hsu, Chia-Yu ^{[1
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

来源：

MATERIALS | 2024年 / 17卷 / 09期

关键词：

Cu-Cu direct bonding; surface creep; elastic deformation; void morphology; Cu film thickness; MICROBUMPS;

D O I：

10.3390/ma17092150

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the hybrid bonding process, the final stage of chemical mechanical polishing plays a critical role. It is essential to ensure that the copper surface is recessed slightly from the oxide surface. However, this recess can lead to the occurrence of interfacial voids between the bonded copper interfaces. To examine the effects of copper film thickness on bonding quality and bonding mechanisms in this study, artificial voids were intentionally introduced at the bonded interfaces at temperatures of 250 degrees C and 300 degrees C. The results revealed that as the thickness of the copper film increases, there is an increase in the bonding fraction and a decrease in the void fraction. The variations in void height with different copper film thicknesses were influenced by the bonding mechanism and bonding fraction.

引用

页数：10

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