Ultrasensitive Photo-Thermal Multimodal Sensory based on Self-Doping Modulation of Bi2O2Se Semiconductor

Herein, high-performance photo-thermal multimodal sensors based on novel two-dimentional layered Bi2O2Se semiconductor were demonstrated, wherein the electron mobility exceeded 175 cm(2)V(-1)s(-1) at room temperature, the photoresponsivity achieved 5x10(5) A/W, the specific detectivity attained the order of 10(12) Jones, and the temperature sensitivity reached 2.5 %/K. The integrated superior capability of photo- and thermal sensory is attributed to the self-doping modulation of Bi2O2Se, which facilitates the carrier transport within [Bi2O2](2+) interlayers. This work offers a promising route to develop novel multimodal sensors in single-device level.