A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact

被引:0
|
作者
Xia, Zhonghui [1 ]
Wang, Sujuan [1 ]
Liu, Xueting [1 ]
Chen, Hongyu [1 ]
Su, Longxing [2 ,3 ]
机构
[1] South China Normal Univ, Sch Semicond Sci & Technol, Guangzhou 510631, Peoples R China
[2] Dongguan Univ Technol, Int Sch Microelect, Dongguan 523808, Peoples R China
[3] Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; van der Waals contact; photodetector; dual-mode; LARGE-SCALE SYNTHESIS; NANOSHEETS;
D O I
10.1088/1361-6463/ad4660
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional (2D) molybdenum selenide (MoSe2) is promising for use in the development of photodetectors for the harvesting of light from the ultraviolet to the near-infrared band, while high responsivity and fast response speed are difficult to simultaneously realize. Herein, we present a dual-mode MoSe2 photodetector with asymmetric electrodes, in which graphene and Cr metal are utilized as ohmic and Schottky contacts, respectively. The photodiode possesses fabulous Schottky characteristics, with a rectification ratio of similar to 250 and a low dark current of similar to 40 pA at -1 V. Under forward bias voltage of 1 V, the photodetector works in photoconductive mode with a slow response speed (decay time: similar to 5 min) but high responsivity (632 mA W-1). However, at reverse bias voltage, the photodetector acts as a photovoltaic-type device due to the Schottky barrier between Cr and MoSe2. Because of the reinforced built-in electric field, the photodetector driven at -5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 mu s). This study provides a deep understanding of asymmetric structure MoSe2 photodetectors operated in two modes, which promotes a forward step toward 2D material optoelectronics.
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页数:10
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