3.3 kV-class 4H-SiC Epi-refilled Super-junction Diode with Repetitive Surge Current Robustness

被引：1

作者：

Cheng, Haoyuan ^{[1
]}

Wang, Hengyu ^{[1
]}

Zhang, Chi ^{[1
]}

Wang, Ce ^{[1
]}

Wan, Jiangbin ^{[1
]}

Han, Jingrui ^{[2
]}

Ting, Hungkit ^{[2
]}

Que, Qianqian ^{[1
]}

Li, Yanjun ^{[1
]}

Bai, Miaoguang ^{[1
]}

Wu, Yiding ^{[1
]}

Sheng, Kuang ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Peoples R China

[2] Guangdong Tianyu Semicond Co LTD, Dongguan, Peoples R China

来源：

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 | 2024年

基金：

中国国家自然科学基金;

关键词：

Super-junction; trench-refilling; hexagonal cell; surge robustness;

D O I：

10.1109/ISPSD59661.2024.10579635

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, the 4H-SiC super-junction (SJ) Schottky barrier diode (SBD) with hexagonal cell has been fabricated by trench etching and epitaxial regrowth process. The fabricated device achieves a breakdown voltage (BV) of 3570V with specific on-resistance (R-on,R-sp) of 4.5m Omega.cm(2) which breaks the one-dimensional performance limit of the SiC unipolar device. The impact of SJ's mesa width on static I-V and C-V characteristic has also been investigated. With a double pulse test, the fabricated device performs high speed switching over 50kV/mu s. The repetitive surge current test is also carried out on the fabricated device to demonstrate its surge robustness.

引用

页码：13 / 16

页数：4

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