Effect of Ni-doping on the structural and electronic properties of metal halide perovskite CsSnBr3: a DFT study

被引:0
|
作者
Ozcan, Merve [1 ]
Gecit, F. Hayal [2 ]
Cabuk, Suleyman [2 ]
机构
[1] Toros Univ, Fac Engn, Elect Elect Engn, Mersin, Turkiye
[2] Cukurova Univ, Fac Sci & Letters, Phys Dept, Adana, Turkiye
关键词
CsSnBr3; Ni-doped; supercell; electronic band gap; bonding;
D O I
10.1088/1402-4896/ad51b2
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The structural and electronic properties of pure and Ni-doped perovskite CsSnBr3 in unit cell and supercell were computed using density functional theory at ambient pressure. Computed formation energy values of undoped and Ni-doped CsSnBr3 compounds show that these structures are stable. We used both standard DFT and HSE06 calculation in electronic band structure of pure and Ni-doped CsSnBr3 compounds. Since the band gap of undoped and Ni-doped CsSnBr3 compounds is located at the R symmetry point in the Brilloun zone, these compounds are materials with a direct band gap. In the HSE06 calculation, it was found that the band gap of 12.5% Ni doped-CsSnBr3 increased significantly from 1.1162 eV to 1.4343 eV. The electron charge density, Bader charge analysis and density of states reveal a strong covalent bond between Sn-Br (Ni-Br) and a strong ionic bond between Cs-Br. The direct electronic band gaps of undoped and Ni-doped CsSnBr3 perovskites in the visible energy range show that these compounds can be used effectively in optical applications.
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页数:9
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