Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

被引：0

作者：

Meneghini, Matteo ^{[1
]}

Ng, Geok Ing ^{[2
]}

Medjdoub, Farid ^{[3
]}

Buffolo, Matteo ^{[1
]}

Warnock, Shireen ^{[4
]}

Nath, Digbijoy ^{[5
]}

Suda, Jun ^{[6
]}

Shi, Junxia ^{[7
]}

Shen, Shyh-Chiang ^{[8
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Jurong West 639798, Singapore

[3] Univ Lille, CNRS IEMN, F-59650 Villeneuve Dascq, France

[4] MIT, Lincoln Lab, Lexington, MA 02421 USA

[5] Indian Inst Sci IISc, Ctr Nano Sci & Engn CeNSE, Bengaluru 560012, India

[6] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan

[7] Univ Illinois, Dept Elect & Comp Engn, Chicago, IL 60607 USA

[8] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 03期

关键词：

D O I：

10.1109/TED.2024.3359934

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On behalf of myself and the other guest editors for the Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications featured in this months IEEE Transactions on Electron Devices, we are pleased to offer readers a selection of papers that span the contemporary landscape of wide and ultrawide bandgap semiconductor devices.

引用

页码：1340 / 1343

页数：4

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