IMPROVING GATE OXIDE UNIFORMITY USING WET-DRY OXIDATION FOR SEMICONDUCTOR MANUFACTURING

被引：0

作者：

Tang Lin ^{[1
]}

Xie Weisi ^{[2
]}

Jia Zeqi ^{[2
]}

Chen Xiwei ^{[2
]}

Zhang Yunyan ^{[1
]}

Luo Jinjiang ^{[1
]}

Gao Dawei ^{[1
,2
]}

Fang Wenzhang ^{[1
,2
,3
]}

机构：

[1] Zhejiang Univ, Sch Micronano Elect, Hangzhou 311200, Peoples R China

[2] Zhejiang ICsprout Semicond Co Ltd, Hangzhou 311200, Peoples R China

[3] ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China

来源：

CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年

基金：

国家重点研发计划;

关键词：

D O I：

10.1109/CSTIC61820.2024.10532044

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The uniformity of gate oxide is essential to the semiconductor manufacturing process. An unsatisfactory uniformity can lead to a decrease in device performance and yield. This work studies the uniformity of gate oxide film formed in three ways, including dry oxidation, wet oxidation and a sequential process of wet oxidation followed by dry oxidation (wet-dry). The uniformity of gate oxide film decreases as temperature rises between 750 similar to 900 degrees C, and as the gas flow increases. The wet-dry process can maintain a high uniformity at relatively high thickness compared to wet and dry processes. This work will be beneficial to achieving the ideal process window for the target gate oxide film.

引用

页数：3

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