Design & Characterization of Front End Electronics for Silicon Photomultiplier for imaging of hard X-rays using NaI (Tl) scintillator

被引：0

作者：

Goyal, Shiv Kumar ^{[1
,2
]}

Naik, Amisha P. ^{[2
]}

Kumar, Abhay ^{[1
]}

Vadawale, Santosh ^{[1
]}

机构：

[1] Phys Res Lab, Ahmadabad, Gujarat, India

[2] Nirma Univ, Inst Technol, Ahmadabad, Gujarat, India

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

SiPM; NaI (Tl) scintillator; FEE design; X-ray imaging;

D O I：

10.1109/EDTM58488.2024.10511893

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-organic scintillation detector with Silicon Photomultiplier (SiPM) readout is used for the X-ray energy measurements. The circuits are developed and tested with SensL make SiPM detectors. Front End Electronics (FEE) consists of high-speed and high sensitive circuits designed for the detection of Femto-Coulomb charge from the SiPM. The measurement of this charge provides the information of the number of photons interacting with SiPM detector. The variation in the detector signal strength (i.e. number of photons) with the X-ray interaction position is recorded which shows linear trend. The experimental results are further validated using Monte - Carlo simulation.

引用

页码：463 / 465

页数：3

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