Perspectives for III-nitride photonic platforms

被引：0

作者：

Boucaud, Philippe ^{[1
]}

Bhat, Nagesh ^{[1
]}

Gromovyi, Maksym ^{[2
]}

El Kurdi, Moustafa ^{[2
]}

Reserbat-Plantey, Antoine ^{[1
]}

Dau, Minh Tuan ^{[1
]}

Al Khalfioui, Mohamed ^{[1
]}

Alloing, Blandine ^{[1
]}

Damilano, Benjamin ^{[1
]}

Semond, Fabrice ^{[1
]}

机构：

[1] Univ Cote Azur, CNRS, CRHEA, Rue Bernard Gregory, F-06905 Valbonne, France

[2] Univ Paris Saclay, CNRS, C2N, 10 Blvd Thomas Gobert, F-91120 Palaiseau, France

来源：

NANO FUTURES | 2024年 / 8卷 / 02期

关键词：

perspectives; photonic circuits; III-nitride; integrated photonics; 2D materials; FREQUENCY COMB GENERATION; ROOM-TEMPERATURE; SILICON-NITRIDE; 2ND-HARMONIC GENERATION; EPITAXIAL-GROWTH; NEAR-ULTRAVIOLET; LASER-DIODES; ALUMINUM; EMISSION; BLUE;

D O I：

10.1088/2399-1984/ad41aa

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The development of photonic platforms for the visible or ultra-violet spectral range represents a major challenge. In this article, we present an overview of the technological solutions available on the market. We discuss the pros and cons associated with heterogeneous or monolithic integration. We specifically focus on the III-nitride platform for integrated photonics. The III-nitrides offer every building block needed for a universal platform. We discuss the additional opportunities offered by combining III-nitride semiconductors with other materials such as two-dimensional materials.

引用

页数：13

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