Broadband spectrum generation in Silicon nanocrystal-based dual -slot waveguide

The generation of broadband spectrum in nearinfrared regions has a very useful application in the domain of telecommunication. A silicon nanocrystal-based dual-slot waveguide was reported earlier to possess very low and flat group velocity dispersion and very high nonlinearity within an operating wavelength region of 1.2 to 1.6 pm which makes it a great candidate to achieve broadband spectrum generation within that wavelength range. In this work, we numerically study the generation of broadband frequency spectrum using in Silicon nanocrystal-based dual-slot waveguide. In this work, we have shown that using an un-chirped 90W super -Gaussian input pulse sharpness parameter 3 and with a temporal width of 500 fs results in a broadband intensity spectrum of wavelength span 1.284 to 1.836 pm covering the entire communication band starting from the 0 to L hand, which makes it potentially applicable as a device in the field of communication and many more.