influence of etching sequence on morphology in deep silicon etching

被引:0
|
作者
Ma, Yiming [1 ]
Yang, Guang [1 ]
Xu, Litian [1 ]
Jiang, Zhongwei [1 ]
Wang, Jing [1 ]
Wang, Donghan [1 ]
Li, Dong [1 ]
机构
[1] Beijing NAURA Microelect Equipment Co Ltd, Beijing, Peoples R China
来源
CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC | 2024年
关键词
silicon; etch; side wall; selectivity; morphology; CL-2;
D O I
10.1109/CSTIC61820.2024.10531958
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
The cycli etching process is mainly used for silicon etching, which can achieve a large aepect ratio and selectivity ratio. The article uses CL2/Ar ase the main etching gas, O2 as the passivation gas, and CF4/CHF3 as the gas for opening the bottom of passivation layer. The result show that the silicon sidewall angle >= 96 degrees, the silicon sidewall is continuous, and there is no obvious fan-shaped roughness.
引用
收藏
页数:2
相关论文
共 50 条
  • [21] The application of the scallop nanostructure in deep silicon etching
    Lin, Yuanwei
    Yuan, Renzhi
    Zhou, Ce
    Dong, Zihan
    Su, Ziduo
    Zhang, Haimiao
    Chen, Zhenpeng
    Li, Yunyun
    Wang, Chun
    NANOTECHNOLOGY, 2020, 31 (31)
  • [22] Improvement of sidewall roughness in deep silicon etching
    Chabloz, M
    Sakai, Y
    Matsuura, T
    Tsutsumi, K
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2000, 6 (03): : 86 - 89
  • [23] Dependence of silicon fracture strength and surface morphology on deep reactive ion etching parameters
    Chen, KS
    Ayon, AA
    Lohner, KA
    Kepets, MA
    Melconian, TK
    Spearing, SM
    MATERIALS SCIENCE OF MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES, 1999, 546 : 21 - 26
  • [24] Silicon Deep Etching Techniques for MEMS Devices
    WU Ying 1
    2.Military Logistic Engineering Institutes
    3.44 th Research Institute
    4.Chuandong Oil Development Co.
    SemiconductorPhotonicsandTechnology, 2003, (04) : 226 - 229
  • [25] Inverse RIE lag of silicon deep etching
    Chung, CK
    Chiang, HN
    NSTI NANOTECH 2004, VOL 1, TECHNICAL PROCEEDINGS, 2004, : 481 - 484
  • [26] Improvement of sidewall roughness in deep silicon etching
    M. Chabloz
    Y. Sakai
    T. Matsuura
    K. Tsutsumi
    Microsystem Technologies, 2000, 6 : 86 - 89
  • [27] MODELING OF DEEP SILICON ETCHING IN MULTICOMPONENT PLASMA
    ABACHEV, MK
    BARYSHEV, YP
    LUKICHEV, VF
    ORLIKOVSKY, AA
    VACUUM, 1992, 43 (5-7) : 565 - 566
  • [28] Cryogenic etching of deep narrow trenches in silicon
    Aachboun, S
    Ranson, P
    Hilbert, C
    Boufnichel, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04): : 1848 - 1852
  • [29] Deep reactive ion etching of silicon carbide
    Tanaka, S
    Rajanna, K
    Abe, T
    Esashi, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2173 - 2176
  • [30] INFLUENCE OF REACTANT TRANSPORT ON FLUORINE REACTIVE ION ETCHING OF DEEP TRENCHES IN SILICON
    ARNOLD, JC
    GRAY, DC
    SAWIN, HH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2071 - 2080