Insulation Design Rule for a Spacer in SF6/N2-filled DC Gas Insulated Apparatus

被引:2
|
作者
Zhou, Hongyang [1 ,2 ,3 ]
Ma, Guoming [1 ,2 ,3 ]
Zhang, Meng [1 ,2 ,3 ]
Wang, Cong [1 ,2 ,3 ]
Tu, Youping [1 ,2 ,3 ]
Li, Chengrong [1 ,2 ,3 ]
机构
[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewable, Beijing 102206, Peoples R China
[2] North China Elect Power Univ, Beijing Key Lab High Voltage, Beijing 102206, Peoples R China
[3] North China Elect Power Univ, EMC, Beijing 102206, Peoples R China
来源
关键词
Electric fields; Conductivity; Threshold voltage; Current measurement; Conductivity measurement; Ions; Flashover; Charge accumulation; DC spacer; flashover voltage; SF6/N-2; threshold of surface electric field strength; SURFACE-CHARGES ACCUMULATION; FIELD DISTRIBUTION; MECHANISM;
D O I
10.17775/CSEEJPES.2020.02100
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A recurring challenge of a DC SF6/N-2-filled GIS/GIL apparatus is the charge accumulation at DC stress. The conventional design rules and knowledge of AC spacers may not be applicable for this new type of apparatus. A novel design rule is proposed considering the effect of accumulated charge on the threshold of electric field strength being resistant to the superposed voltage. A surface charge accumulation simulation model is introduced, and the key parameters in the simulation model are measured. In addition, an experimental platform for a 100 kV spacer flashover test is established. Spacer flashover tests under superimposed voltage with opposing polarities are carried out, and the withstanding voltage of the spacer is obtained. Finally, based on the proposed model, the threshold of the surface electric field strength (tangential component) on the DC spacer in SF6/N-2 mixed gases is discussed. For a reliable insulation design of a DC GIS/GIL apparatus filled with 0.7 MPa SF6/N-2, the threshold of surface electric field strength on the DC spacer is 12 kV/mm. The insulation design rule can be referenced in the design of a high-voltage DC SF6/N-2-filled GIS/GIL apparatus.
引用
收藏
页码:727 / 735
页数:9
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