A Stranski-Krastanov to Volmer-Weber transition in the growth mode of self-assembled quantum dots

被引：0

作者：

Oliphant, Ryn ^{[1
]}

Coleman, Hunter J. ^{[1
]}

Abramson, Matthew ^{[1
]}

Sautter, Kathryn E. ^{[2
]}

Simmonds, Paul J. ^{[3
]}

Ratsch, Christian ^{[4
,5
]}

机构：

[1] Boise State Univ, Dept Phys, Boise, ID 83725 USA

[2] Boise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA

[3] Tufts Univ, Dept Elect & Comp Engn, Medford, MA 01255 USA

[4] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA

[5] Univ Calif Los Angeles, Inst Pure & Appl Math, Los Angeles, CA 90095 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2024年 / 640卷

关键词：

A1 Growth models; A3 Atomic layer epitaxy; A1 Surface structure; A1 Computer simulation; A1 Atomic force microscopy; A1; Interfaces;

D O I：

10.1016/j.jcrysgro.2024.127761

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present recent experiments for tensile -strained Ge QDs on InAlAs(111)A where we observe that growth proceeds via the Stranski-Krastanov (SK) growth mode at lower temperatures and transitions to the Volmer- Weber (VW) growth mode at higher temperatures. We discuss atomistic kinetic Monte Carlo simulations that show how the SK to VW growth mode transition is affected by model parameters. We find that systems are more likely to transition from a SK to a VW mode when the bond energy between substrate atoms is weaker than the bond energy between atoms of the deposited material. We also show how entropic effects due to intermixing can stabilize a layer -by -layer growth mode in certain parameter regimes.

引用

页数：5

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