Highly Sensitive Performance Flexible Deep UV Photodetectors Based on CsCu2I3/Mg0.2Zn0.8O Bulk Heterojunction

被引：0
|
作者：
Liu, Chengjun [1 ]
Zhang, Yuyi [1 ]
Zhu, Yaoming [1 ]
Wang, Lixi [2 ]
Chang, Jianhua [2 ]
Li, Qing [1 ]
Zhang, Xiaobing [1 ]
Pan, Jiangyong [2 ]
Chen, Jing [1 ]
Lei, Wei [1 ]
机构：
[1] Southeast Univ, Sch Elect Sci & Engn, Joint Int Res Lab Informat Display & Visualizat, Nanjing 210096, Peoples R China
[2] Nanjing Univ Informat Sci & Technol, Sch Elect & Informat Engn, Nanjing 210044, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 07期
关键词：
Deep UV photodetector; lead free perovskite; flexible; high sensitivity;
D O I：
10.1109/LED.2024.3405194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Flexible deep ultraviolet (UV) photodetectors have received extensive attention due to low background noise and high reliability in operation environments. Herein, we demonstrate a highly performance deep UV photodetector based on CsCu2I3/Mg0.2Zn0.8O bulk heterojunction. Mg0.2Zn0.8O quantum dots as electron transfer sites can facilitate the transfer of photogenerated carriers to improve the device performance. As a result, the CsCu2I3/Mg0.2Zn0.8O based photodetector exhibits high responsivity of 1.12 A/W and specific detectivity of 3.26x10(12) Jones. Moreover, the flexible photodetector maintains relatively high performance after 2000 times bending cycles at curvature radius of 5 mm. Our work provides a reliable and low-cost approach for highly performance flexible deep UV photodetection.
引用
收藏
页码：1229 / 1232
页数：4
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