Design Close to the Edge for Advanced Technology using Machine Learning and Brain-Inspired Algorithms

被引:0
|
作者
Amrouch, Hussam [1 ]
Klemme, Florian [1 ]
Genssler, Paul R. [1 ]
机构
[1] Univ Stuttgart, Dept Comp Sci, Chair Semicond Test & Reliabil STAR, Stuttgart, Germany
关键词
Machine Learning; Brain-Inspired Computing; Reliability; FinFET; Cell Libraries; SRAM; ML-CAD;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In advanced technology nodes, transistor performance is increasingly impacted by different types of design-time and run-time degradation. First, variation is inherent to the manufacturing process and is constant over the lifetime. Second, aging effects degrade the transistor over its whole life and can cause failures later on. Both effects impact the underlying electrical properties of which the threshold voltage is the most important. To estimate the degradation-induced changes in the transistor performance for a whole circuit, extensive SPICE simulations have to be performed. However, for large circuits, the computational effort of such simulations can become infeasible very quickly. Furthermore, the SPICE simulations cannot be delegated to circuit designers, since the required underlying transistor models cannot be shared due to their high confidentiality for the foundry. In this paper, we tackle these challenges at multiple levels, ranging from transistor to memory to circuit level. We employ machine learning and brain-inspired algorithms to overcome computational infeasibility and confidentiality problems, paving the way towards design close to the edge.
引用
收藏
页码:493 / 499
页数:7
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