Characteristics of the MTx optical transmitter in Total Ionizing Dose

被引：0

作者：

Gong, D. ^{[1
]}

Hou, S. ^{[2
]}

Juang, B. J. ^{[2
]}

Li, J. -H. ^{[2
,3
]}

Liu, C. ^{[1
]}

Liu, T. ^{[1
]}

Qi, M. ^{[4
]}

Ye, J. ^{[1
]}

Zhang, Lei ^{[4
]}

Zhang, Li ^{[1
]}

Zhu, H. P. ^{[5
]}

机构：

[1] Southern Methodist Univ, Dallas, TX 75205 USA

[2] Acad Sinica, Acad Sin, Taipei 11529, Taiwan

[3] Natl Taiwan Univ, Taipei 10617, Taiwan

[4] Nanjing Univ, Nanjing 210093, Jiangsu, Peoples R China

[5] Inst Nucl Energy Res, Taoyuan 32546, Taiwan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2024年 / 1064卷

关键词：

LHC; Optoelectronic; Radiation hardness; ASIC;

D O I：

10.1016/j.nima.2024.169378

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The dual-channel multi-mode 850 nm optical Miniature Transmitter (MTx) is developed for data transmission of the ATLAS LAr calorimeter readout at LHC. The MTx's are exposed to the radiation field of proton-proton collisions, therefore, the tolerance in Total Ionizing Dose (TID) is required. The TID effects in the MTx are investigated with X-rays and Co -60 gamma-rays for the active components of VCSEL diodes, and the customized Link-on-Chip laser driver (LOCld) developed in 0.25 mu m Silicon-on-Sapphire CMOS technology. The irradiation tests were conducted at various dose rates. The responses to TID are observed with degradation of laser currents at initial dose of 10 to 100 Gy(SiO2), and partial recovery with additional TID to a stable output about 90% of the original. The optical eye diagrams of irradiated samples show slightly increased jittering, and are suitable for the ATLAS requirement of 5 Gbps applications.

引用

页数：6

共 50 条

[21] Total ionizing dose effects in bipolar devices and circuits
Pease, RL
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) : 539 - 551
[22] A Bayesian Approach for Total Ionizing Dose Hardness Assurance
Ladbury, R.
Triggs, B.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (06) : 3004 - 3010
[23] System on Module Total Ionizing Dose Distribution Modeling
Akhmetov, A. O.
Boychenko, D. V.
Bobrovskiy, D. V.
Chumakov, A. I.
Kalashnikov, O. A.
Nikiforov, A. Y.
Nekrasov, P. V.
2014 29TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS PROCEEDINGS - MIEL 2014, 2014, : 329 - 331
[24] Total ionizing dose effects in bipolar and BiCMOS devices
Chavez, RM
Rax, BG
Scheick, LZ
Johnston, AH
NSREC: 2005 IEEE Radiation Effects Data Workshop, Workshop Record, 2005, : 144 - 148
[25] Evaluation of Total Ionizing Dose Effects on Commercial FRAMs
Slimani, Mariem
Armani, Jean-Marc
Gaillard, Remi
2018 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2018, : 140 - 144
[26] Total ionizing dose effects in MOS oxides and devices
Oldham, TR
McLean, FB
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) : 483 - 499
[27] Detailed total ionizing dose effects on LDMOS transistors
Houadef, Ali
Djezzar, Boualem
MICROELECTRONICS RELIABILITY, 2022, 136
[28] Total Ionizing Dose Effect in LDMOS Oxides and Devices
Borel, T.
Furic, S.
Leduc, E.
Michez, A.
Boch, J.
Touboul, A.
Azais, B.
Danzeca, S.
Dusseau, L.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (07) : 1606 - 1611
[29] Total ionizing dose sensitivity of function blocks in FRAM
Gu, Ke
Liou, J. J.
Li, Wei
Liu, Yang
Li, Ping
MICROELECTRONICS RELIABILITY, 2015, 55 (06) : 873 - 878
[30] ATOMIC DISPLACEMENT AND TOTAL IONIZING DOSE DAMAGE IN SEMICONDUCTORS
BRAUNIG, D
WULF, F
RADIATION PHYSICS AND CHEMISTRY, 1994, 43 (1-2) : 105 - 127

← 1 2 3 4 5 →