Comparative Study of SiC Transistors for Active Current Limitation in S3R

被引：1

作者：

Marroqui, David ^{[1
]}

Borrell, Jorge ^{[1
]}

Gutierrez, Roberto ^{[1
]}

Manuel Blanes, Jose ^{[1
]}

Garrigos, Ausias ^{[1
]}

Maset, Enrique ^{[2
]}

机构：

[1] Miguel Hernandez Univ Elche, IE G, Elche, Spain

[2] Univ Valencia, Dept Elect Engn, Valencia, Spain

来源：

ELEKTRONIKA IR ELEKTROTECHNIKA | 2017年 / 23卷 / 05期

关键词：

S3R; sequential switching shunt regulator; SiC; Cascode; current limiter; WBG;

D O I：

10.5755/j01.eie.23.5.19243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a comparative analysis between different kinds of Silicon Carbide (SiC) transistors applied to the Sequential Switching Shunt Regulator (S3R) with active current limitation capability is presented. The S3R is a well-known Direct Energy Transfer photovoltaic power conditioner used in space vehicles. The main novelty discussed in this paper is the use of SiC transistors, JFET cascodes and SiC MOSFETs, instead of Silicon MOSFETs. High-voltage, high-power and high-temperature characteristics of these devices make them ideal for this application.

引用

页码：54 / 60

页数：7

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