Tin doping modulates electron-hole recombination in Dion-Jacobson phase 2D hybrid perovskite

To obtain less-toxic and optimal-band-gap perovskite materials, tin (Sn)-lead (Pb) hybrid technology comes into the sight of researchers. The Sn-Pb ratio primarily affects the electronic band structure, conductivity, and carrier transport, which are essential for optoelectronic performance. While most reports are about 3D materials, there has been little coverage of 2D Sn-Pb perovskites which exhibiting improved stability. In this paper, the e-h recombination dynamics in Dion-Jacobson Phase 2D Sn-Pb perovskites are studied using time-dependent ab initio nonadiabatic molecular dynamics (NAMD) simulation. It is found that Sn doping plays a significant role in narrowing the band-gap of 2D perovskites and localizing the charge distribution. Only a small amount of Sn doping can minimize NA coupling and shorten decoherence time of frontier orbitals simultaneously, then leading to longer charge recombination time. NAMD simulations reveal the optimal Sn ratio (25 mol%) and provide an effective way to design high-performance 2D perovskite materials.