Nonvolatile Memory Devices Based on Two Dimensional WSe2/MoS2 van der Waals Heterostructure

Non-volatile memory (NVM) plays a vital role in modern computing and data storage due to its fast read and write speed, high density and low power consumption. With the fast development of information technology, the demand for higher performance and density NVM is increasing. However, with the traditional Complementary Metal Oxide Semiconductor scaling approaching physical limits, the development of high-performance and high-density NVM faces several challenges. The emerging two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) with their unique electronic and physical properties, have garnered significant attention and have been expected as the potential materials for next-generation NVM devices. Here, we demonstrate a novel NVM device based on 2D WSe2/MoS2 van der Waals heterostructure (vdWH). The device exhibits excellent NVM performances with a maximum memory window of 135 V and the Program/Erase ratio is up to 100 at a low bias of 0.1 V. Meanwhile, nice program/erase retention and endurance performance were achieved. This work reveals the great potential of the WSe2/MoS2 vdWH for next-generation high-performance NVM.