Development progress of Gigaphoton's LPP EUV light source for inspection systems

被引:0
|
作者
Iwamoto, Fumio [1 ]
Ueno, Yoshifumi [1 ]
Nagai, Shinji [1 ]
Miyao, Kenichi [1 ]
Hayashi, Hideyuki [1 ]
Ishii, Takuya [1 ]
Abe, Tamotsu [1 ]
Nakarai, Hiroaki [1 ]
Saitou, Takashi [1 ]
机构
[1] Gigaphoton Inc, 400 Yokokurashinden, Oyama, Tochigi 3238558, Japan
来源
关键词
EUV lithography; Mask inspection; EUV light source; High brightness; Laser produced plasma; Sn droplet generator; Prepulse laser; Debris mitigation;
D O I
10.1117/12.3010135
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gigaphoton Inc. presents a Sn-LPP EUV light source for mask inspection tools. This light source uses a minimum-mass Sn droplet generator with an in-line Sn fuel supply system, a double-pulse laser irradiation scheme with precise shooting control and a debris mitigation technology with H-2 buffer-gas flow. During 1500 hours of continuous operation, a brightness of 120W/mm(2)sr at the plasma point, a stable EUV energy 3 sigma-value below 5% and a high availability of 99% have been obtained without reflectivity degradation of the EUV collector mirror. We are currently developing key components for higher repetition rate to further increase the brightness.
引用
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页数:7
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