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Active control of thermal conductivity of low-dimensional <bold>α</bold>-PbS by strain-induced ferroelectric
被引:0
|作者:
Zhang, Jingtong
[1
]
Xu, Tao
[2
]
Liu, Chang
[3
]
Wang, Jie
[1
,4
,5
]
机构:
[1] Zhejiang Lab, Hangzhou 311100, Zhejiang, Peoples R China
[2] Kyoto Univ, Dept Mech Engn & Sci, Nishikyo Ku, Kyoto 6158540, Japan
[3] Southwest Jiaotong Univ, Sch Mech & Aerosp Engn, Chengdu 610031, Peoples R China
[4] Zhejiang Univ, Dept Engn Mech, 38 Zheda Rd, Hangzhou 310027, Peoples R China
[5] Zhejiang Univ, Key Lab Soft Machines & Smart Devices Zhejiang Pro, 38 Zheda Rd, Hangzhou 310027, Peoples R China
基金:
中国国家自然科学基金;
关键词:
D O I:
10.1063/5.0222022
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Active control of heat transfer in nanostructured materials is crucial for the development of microelectronic devices. Thermal switch is a typical heat management device, which has attracted widespread attention. In this work, based on first-principles calculations, we propose a two-dimensional thermal switch based on the strain-induced ferroelectric phase transition in alpha-PbS. It is found that thermal conductivity can be significantly reduced by external strain and a room temperature two-dimensional thermal switch with a switch ratio of 3.7 can be constructed. The calculated phonon lifetime and scattering rate reveal that phonons around 2 THz frequency range predominantly contribute to the modulation in thermal conductivity when the strain is smaller than 2.0%. A detailed analysis on phonon dispersion indicates that these phonons are LO2 and TO3 branches. When the strain is larger than 2.0%, the decrease in phonon group velocity leads to the reduction in thermal conductivity. Our work elucidates the mechanisms for changes in the thermal conductivity of alpha-PbS under strain and provides a low-dimensional thermal switch, which is promising for future applications in microelectronic devices.
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