Direct measurement of spin-flip rates of a self-assembled InAs double quantum dot in single-electron tunneling

被引:0
|
作者
Dani, Olfa [1 ]
Hussein, Robert [2 ]
Bayer, Johannes C. [1 ]
Pierz, Klaus [3 ]
Kohler, Sigmund [4 ]
Haug, Rolf J. [1 ]
机构
[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Friedrich Schiller Univ Jena, Inst Festkorpertheorie & opt, D-07743 Jena, Germany
[3] Phys Tech Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany
[4] Inst Ciencia Mat Madrid, CSIC, E-28049 Madrid, Spain
关键词
RELAXATION; DYNAMICS;
D O I
10.1103/PhysRevB.109.L121404
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such devices, different Land & eacute; factors lead to an inhomogeneous Zeeman splitting, so that the two spin channels can never be at resonance simultaneously, leading to a spin blockade at low temperatures. This blockade is analyzed in terms of spin flips for different temperatures and magnetic fields. Our results are in good agreement with a quantum master equation that combines the dot-lead couplings with ohmic dissipation stemming from spin-flip cotunneling.
引用
收藏
页数:6
相关论文
共 50 条
  • [31] Intermixing in self-assembled InAs quantum dot formation
    Heyn, C
    Bolz, A
    Maltezopoulos, T
    Johnson, RL
    Hansen, W
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 46 - 50
  • [32] InAs/GaAs single-electron quantum dot qubit
    Li, SS
    Xia, JB
    Liu, JL
    Yang, FH
    Niu, ZC
    Feng, SL
    Zheng, HZ
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) : 6151 - 6155
  • [33] Shell structures in self-assembled InAs quantum dots observed by lateral single electron tunneling structures
    Jung, M
    Hirakawa, K
    Ishida, S
    Arakawa, Y
    Kawaguchi, Y
    Komiyama, S
    Physics of Semiconductors, Pts A and B, 2005, 772 : 635 - 636
  • [34] Single electron transistors using single self-assembled InAs quantum dots
    Jung, M
    Sekine, N
    Hirakawa, K
    Ishida, S
    Arakawa, Y
    Kawaguchi, Y
    Komiyama, S
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 31 - 34
  • [35] Spin-Flip Transitions in Tunneling through a Quantum Dot Coupled to Ferromagnetic Electrodes
    Rudzinski, W.
    ACTA PHYSICA POLONICA A, 2009, 115 (01) : 281 - 283
  • [36] Erratum: Electrically tuned spin–orbit interaction in an InAs self-assembled quantum dot
    Y. Kanai
    R. S. Deacon
    S. Takahashi
    A. Oiwa
    K. Yoshida
    K. Shibata
    K. Hirakawa
    Y. Tokura
    S. Tarucha
    Nature Nanotechnology, 2012, 7 (1) : 75 - 75
  • [37] Optical spin polarization in double charged InAs self-assembled quantum dots
    Kalevich, VK
    Merkulov, IA
    Shiryaev, AY
    Kavokin, KV
    Ikezawa, M
    Okuno, T
    Brunkov, PN
    Zhukov, AE
    Ustinov, VM
    Masumoto, Y
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (03): : 387 - 391
  • [38] Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot
    Kanai, Y.
    Deacon, R. S.
    Takahashi, S.
    Oiwa, A.
    Yoshida, K.
    Shibata, K.
    Hirakawa, K.
    Tokura, Y.
    Tarucha, S.
    NATURE NANOTECHNOLOGY, 2011, 6 (08) : 511 - 516
  • [39] Electrically tuned spin-orbit interaction in an InAs self-assembled quantum dot
    Kanai Y.
    Deacon R.S.
    Takahashi S.
    Oiwa A.
    Yoshida K.
    Shibata K.
    Hirakawa K.
    Tokura Y.
    Tarucha S.
    Nature Nanotechnology, 2011, 6 (8) : 511 - 516
  • [40] Self-assembled metallic nanoparticles for spin dependent single electron tunneling
    Ernult, F.
    Mitani, S.
    Takanashi, K.
    Takahashi, Y. K.
    Hono, K.
    PHASE TRANSITIONS, 2006, 79 (9-10) : 717 - 726