VR device with high resolution, high luminance, and low power consumption using 1.50-in. organic light-emitting diode display

被引:0
|
作者
Ikeda, Hisao [1 ]
Hatsumi, Ryo [1 ]
Tamatsukuri, Yuki [1 ]
Miyata, Shoki [1 ]
Nakamura, Daiki [1 ]
Kozuma, Munehiro [1 ]
Kobayashi, Hidetomo [1 ]
Yamane, Yasumasa [1 ]
Yamagata, Sachiko [1 ]
Tsukamoto, Yousuke [1 ]
Yamazaki, Shunpei [1 ]
机构
[1] Semicond Energy Lab Co Ltd, 398 Hase, Atsugi, Kanagawa 2430036, Japan
关键词
CAAC-OS; metal maskless lithography; OLED microdisplay; OSLSI/SiLSI structure; pancake lens; ultrahigh pixel density;
D O I
10.1002/jsid.1345
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We fabricated a microdisplay with a 1.50-in. organic light-emitting diode (OLED) and a pixel density as high as 3207 ppi. An ideal display with high luminance, low power consumption, an ultrahigh aperture ratio, and a wide color gamut can be fabricated using a metal maskless lithography technology for patterning OLED layers and an oxide semiconductor large-scale integration (OSLSI)/silicon LSI backplane. We designed a virtual reality device that exhibited less ghosting and a field of view of 90 degrees or greater by combining the microdisplay and a novel pancake lens. We fabricated a 1.50-in., 3207-ppi OLED microdisplay with an oxide semiconductor LSI/silicon LSI backplane and a novel pancake lens. Patterning an OLED layer by lithography allows fabrication of an ideal display having low power consumption, an ultra-high aperture ratio, and a wide color gamut. image
引用
收藏
页码:580 / 591
页数:12
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