Growth and superconductivity of the Kagome metal CsV3(Sb1- x Sex)5 single crystals

被引:1
|
作者
Song, Fei [1 ,2 ]
Liu, Yutong [1 ,2 ]
Ni, Hao [1 ,2 ]
Chen, Yongliang [3 ,4 ]
Cheng, Cuihua [3 ]
Zhao, Yong [1 ,2 ,3 ]
机构
[1] Fujian Normal Univ, Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Peoples R China
[2] Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Peoples R China
[3] Southwest Jiaotong Univ, Sch Elect Engn, Key Lab Magnet Suspens Technol & Maglev Vehicle, Minist Educ, Chengdu 610031, Peoples R China
[4] Southwest Jiaotong Univ, Sch Elect Engn, Chengdu 610031, Peoples R China
基金
中国国家自然科学基金;
关键词
CsV3(Sb1-x Se-x)(5 )Kagome metal; Single crystal growth; Superconductivity Charge-density-wave; transition;
D O I
10.1016/j.physleta.2024.129526
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this Letter, CsV3(Sb1-xSex)(5) (0 <= x <= 0.1) crystals were grown using a Sb-rich self-flux method, and studied by XRD, Laue Diffraction, SEM, EDS, and magnetization measurements. It was found that at low doping concentration (x <= 0.08), the crystal has good quality, and the nominal and actual components are basically consistent. At x = 0.1, the crystal quality decreases, and the actual doping amount starts to be slightly lower than the nominal value. Se doping suppresses superconducting transition due to its band filling effect and negative chemical pressure effect on CsV3Sb5. In addition, Se doping also has an inhibitory effect on the CDW transition in CsV3Sb5. Compared with hole type dopants, this electronic type dopant has a weaker inhibitory effect on T-CDW, indicating an asymmetric response of electronic characteristics to carrier charge symbols in the system.
引用
收藏
页数:9
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