Glass transition and crystallization of Se 95 Te 5 chalcogenide glassy semiconductor

The study is dedicated to the investigation of thermo-physical characteristics of Se 95 Te 5 chalcogenide glassy semiconductor during its glass formation and crystallization processes, employing various scanning rates of 5, 10, 15 and 20 K/min in non -isothermal modes through DSC measurement. Analysis of the structural relaxation kinetics involves the Kissinger's, Augis and Bennett's, as well as Matusita's approaches. Experimental data yield contains the determination of crucial parameters such as glass transition ( T g ), crystallization ( T , ), and melting temperatures alongside factors like reduced temperature of glass transition ( T rg ), Hruby's parameter ( K g i ), fragility index ( F 1 ), Avrami exponents (n, m), glass transition (140.24 kJ/mol) and crystallization (E c = 95.11 kJ/mol) energies, respectively. The results confirm that Se 95 Te 5 chalcogenide system as an efficient glass former. Matusita's method reveals that the crystallization mechanism (n = 2.51, m = 1.9) corresponds to volumetric nucleation with two-dimensional growth.