Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory

The exposure of spaceborne devices to high-energy charged particles in space results in the occurrence of both a total ionizing dose (TID) and the single-event effect (SEE). These phenomena present significant challenges for the reliable operation of spacecraft and satellites. The rapid advancement of semiconductor fabrication processes and the continuous reduction in device feature size have led to an increase in the significance of the synergistic effects of TID and SEE in static random access memory (SRAM). In order to elucidate the involved physical mechanisms, the synergistic effects of TID and single-event upset (SEU) in a new kind of 130 nm 7T silicon-on-insulator (SOI) SRAM were investigated by means of cobalt-60 gamma-ray and heavy ion irradiation experiments. The findings demonstrate that 7T SOI SRAM is capable of maintaining normal reading and writing functionality when subjected to TID irradiation at a total dose of up to 750 krad(Si). In general, the TID was observed to reduce the SEU cross-section of the 7T SOI SRAM. However, the extent of this reduction was influenced by the heavy ion LET value and the specific writing data pattern employed. Based on the available evidence, it can be proposed that TID preirradiation represents a promising avenue for enhancing the resilience of 7T SOI SRAMs to SEU.