VCO Design With Uniformly Low Phase Noise Versus Frequency and Temperature for D-Band Applications

被引:0
|
作者
Kraus, Isabel [1 ,2 ]
Knapp, Herbert [2 ]
Pohl, Nils [1 ,3 ]
机构
[1] Ruhr Univ Bochum, Inst Integrated Syst, D-44801 Bochum, Germany
[2] Infineon Technol AG, D-85579 Neubiberg, Germany
[3] Fraunhofer Inst High Frequency Phys & Radar Tech, D-53343 Wachtberg, Germany
关键词
BiCMOS integrated circuits; Colpitts voltage-controlled oscillator (VCO); D-band; low phase noise VCO; VCO design and modeling; OSCILLATOR;
D O I
10.1109/TMTT.2024.3397463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents an approach in the design of voltage-controlled oscillators (VCOs) that aims to provide robust low-noise performance while also being resistant to high-temperature conditions. The proposed design methodology is grounded in the principles of the negative resistance model. For demonstration purposes, a D -band oscillator is realized in a SiGe BiCMOS technology and evaluated, which significantly corroborates the design approach. For frequency doubling, two concepts, the push-push principle (VCO1) and Gilbert cell mixer (VCO2), are implemented and compared with a special focus on load pulling effects. Both realizations target the D -band center frequency of 140 GHz with a tuning range of around 13 GHz. The VCO core draws a current of 40 mA and the on-chip frequency divider 32 mA from a 3.3-V source. A uniform differential output power of about - 1.5 dBm ( - 8 dBm) without buffer and low phase noise of - 98.7 dBc/Hz ( - 95 dBc/Hz) and the VCO remains remarkable phase noise performance up to temperatures > 200 C-degrees.
引用
收藏
页码:6216 / 6227
页数:12
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